Methods of forming a nonvolatile memory cell and methods of forming an array of nonvolatile memory cells
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 30, 2013
Grant Date -
Jun 28, 2012
app pub date -
Dec 27, 2010
filing date -
Dec 27, 2010
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of forming a nonvolatile memory cell includes forming a first electrode and a second electrode of the memory cell. Sacrificial material is provided between the first second electrodes. The sacrificial material is exchanged with programmable material. The sacrificial material may additionally be exchanged with select device material.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully