Semiconductor wafer, semiconductor device, and method of manufacturing a semiconductor device

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Apr 30, 2013
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Jan 27, 2011
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Mar 26, 2009
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Mar 26, 2008

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Abstract

It is an objective of the present invention to form a favorable interface between an oxide layer and a group 3-5 compound semiconductor using a practical and simple method.

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Patent Owner(s)

Patent Owner	Address
SUMITOMO CHEMICAL COMPANY LIMITED	2-7-1 NIHONBASHI CHUO-KU TOKYO 1036020 ?1036020

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
Hata, Masahiko	Ibaraki, JP	79	598
Ichikawa, Osamu	Chiba, JP	97	1315
Takagi, Shinichi	Tokyo, JP	79	2331
Takenaka, Mitsuru	Tokyo, JP	15	95

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Semiconductor wafer, semiconductor device, and method of manufacturing a semiconductor device

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United States of America Patent

12934233

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PATENT NO	8431459
APP PUB NO	20110018033A1
SERIAL NO	12934233
DOCKET NO

US Family Size	Non-US Coverage
Patent Longevity	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
April 30, 2013	US,8431459,B2 US8431459B2	GRANTED PATENT AS SECOND PUBLICATION
January 27, 2011	US,20110018033,A1 US20110018033A1	FIRST PUBLISHED PATENT APPLICATION

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12934233

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