Capacitor contact formed concurrently with bond pad metallization
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United States of America Patent
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Apr 30, 2013
Grant Date -
Feb 11, 2010
app pub date -
Aug 10, 2009
filing date -
Aug 8, 2008
priority date (Note) -
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status (Latency Note)
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Abstract
A method is disclosed for passivating and contacting a capacitor in an IC above a top level of interconnect metallization, without adding process steps. Passivation is accomplished by a dielectric layer, part of the IC protective overcoat, deposited directly on the capacitor, overlapping the electrode edges. Contact is made to the top electrode of the capacitor by etching small capacitor vias during a bond pad via etch process, followed by depositing and patterning bond pad metal in the capacitor vias to connect the top electrode to other circuit elements in the IC. The top electrode thickness is increased to accommodate the bond pad via etch process.
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