Noise reduction in semiconductor devices
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United States of America Patent
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Apr 30, 2013
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N/A
app pub date -
Sep 30, 2010
filing date -
Dec 7, 2006
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Abstract
An integrated circuit and method of making it, includes a semiconductor substrate and a support layer disposed on the semiconductor substrate. A gate insulator including a support layer doped using a noise-reducing dopant can be disposed on the semiconductor substrate. A gate stack can be disposed on the gate insulator.
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