Memory cell that includes a sidewall collar for pillar isolation and methods of forming the same
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United States of America Patent
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Apr 30, 2013
Grant Date -
Aug 4, 2011
app pub date -
Feb 2, 2010
filing date -
Feb 2, 2010
priority date (Note) -
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status (Latency Note)
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Abstract
In a first embodiment, a method of forming a memory cell is provided that includes (a) forming one or more layers of steering element material above a substrate; (b) etching a portion of the steering element material to form a pillar of steering element material having an exposed sidewall; (c) forming a sidewall collar along the exposed sidewall of the pillar; and (d) forming a memory cell using the pillar. Numerous other aspects are provided.
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