PIN structures including intrinsic gallium arsenide, devices incorporating the same, and related methods
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United States of America Patent
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Apr 30, 2013
Grant Date -
Apr 12, 2012
app pub date -
Dec 15, 2011
filing date -
Oct 18, 2010
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Abstract
Provided herein are PIN structures including a layer of amorphous n-type silicon, a layer of intrinsic GaAs disposed over the layer of amorphous n-type silicon, and a layer of amorphous p-type silicon disposed over the layer of intrinsic GaAs. The layer of intrinsic GaAs may be engineered by the disclosed methods to exhibit a variety of structural properties that enhance light absorption and charge carrier mobility, including oriented polycrystalline intrinsic GaAs, embedded particles of intrinsic GaAs, and textured surfaces. Also provided are devices incorporating the PIN structures, including photovoltaic devices.
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