Semiconductor substrate with cobalt silicide buffer layer and its manufacturing method
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United States of America Patent
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Apr 30, 2013
Grant Date -
Apr 7, 2011
app pub date -
Sep 21, 2010
filing date -
Oct 2, 2009
priority date (Note) -
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Abstract
A semiconductor substrate includes: a substrate having a single crystal silicon on at least one surface thereof; a buffer layer that is provided on the single crystal silicon and has at least one cobalt silicide layer primarily containing cobalt silicide; and a silicon carbide single crystal film provided on the buffer layer.
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