Light emitting chip having buffer layer with nitride semiconductor in carbon nano tube structure
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United States of America Patent
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Apr 30, 2013
Grant Date -
Sep 20, 2012
app pub date -
Apr 21, 2011
filing date -
Mar 14, 2011
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A light emitting chip includes a substrate, a buffer layer, a cap layer and a light emitting structure. The buffer layer is formed on the substrate and includes a carbon nano tube structure substantially parallel to the substrate. The carbon nano tube structure is comprised of nitride semiconductor. The cap layer grows from the buffer layer. The light emitting structure is formed on the cap layer. The light emitting structure sequentially includes a first cladding layer connected to the cap layer, a light emitting layer, and a second cladding layer.
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