Pitch multiplied mask patterns for isolated features
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United States of America Patent
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Apr 30, 2013
Grant Date -
Mar 15, 2012
app pub date -
Sep 19, 2011
filing date -
Sep 1, 2005
priority date (Note) -
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Abstract
Crisscrossing spacers formed by pitch multiplication are used to form isolated features, such as contacts vias. A first plurality of mandrels are formed on a first level and a first plurality of spacers are formed around each of the mandrels. A second plurality of mandrels is formed on a second level above the first level. The second plurality of mandrels is formed so that they cross the first plurality of mandrels, when viewed in a top down view. A second plurality of spacers is formed around each of the second plurality of mandrels. The first and the second mandrels are selectively removed to leave a pattern of voids defined by the crisscrossing first and second pluralities of spacers. These spacers can be used as a mask to transfer the pattern of voids to a substrate. The voids can be filled with conductive material to form conductive contacts.
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