High frequency semiconductor device
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United States of America Patent
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Apr 30, 2013
Grant Date -
Jun 10, 2010
app pub date -
Sep 1, 2009
filing date -
Dec 10, 2008
priority date (Note) -
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Abstract
A high frequency semiconductor device includes: a field effect transistor including gate terminal electrodes, source terminal electrodes, and a drain terminal electrode; an input circuit pattern and an output circuit pattern which are disposed adjoining of the field effect transistor; a plurality of input bonding wires configured to connect the plurality of the gate terminal electrodes and the input circuit pattern; and a plurality of output bonding wires configured to connect the drain terminal electrode and the output circuit pattern, which makes matching an input/output signal phase by adjusting an inductance distribution of a plurality of input/output bonding wires, and improves gain and output power, and suppresses an oscillation by unbalanced operation of each FET cell.
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