Solid-state imaging device with channel stop region with multiple impurity regions in depth direction
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United States of America Patent
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Apr 30, 2013
Grant Date -
May 3, 2012
app pub date -
Jan 12, 2012
filing date -
Nov 14, 2002
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Abstract
Channel stop sections formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk) so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate.
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