Lateral trench transistor, as well as a method for its production
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United States of America Patent
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Apr 30, 2013
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app pub date -
Oct 28, 2005
filing date -
Oct 29, 2004
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Abstract
A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.
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