Semiconductor device including first and second semiconductor regions with increasing impurity concentrations from a substrate surface
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United States of America Patent
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Apr 30, 2013
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Feb 8, 2011
filing date -
Mar 1, 2005
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Abstract
A single crystal semiconductor layer of a first conduction type is disposed on a surface of a semiconductor substrate. A plurality of trenches are provided in the semiconductor layer to form a plurality of first semiconductor regions of the first conduction type at intervals in a direction parallel to the surface. An epitaxial layer is buried in the plurality of trenches to form a plurality of second semiconductor regions of a second conduction type. The plurality of second semiconductor regions each includes an outer portion with a high impurity concentration formed against an inner wall of the trench, and an inner portion with a low impurity concentration formed inner than the outer portion.
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