Semiconductor devices and methods of manufacture thereof
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United States of America Patent
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Apr 30, 2013
Grant Date -
Jul 8, 2010
app pub date -
Mar 22, 2010
filing date -
Nov 21, 2006
priority date (Note) -
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Abstract
Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of forming a barrier layer. The method of forming the barrier layer includes providing a workpiece, forming a first material layer over the workpiece, the first material layer comprising a nitride-based metal compound. A second material layer is formed over the first material layer. The second material layer comprises Ta or Ti. The barrier layer comprises the first material layer and at least the second material layer.
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