High frequency device

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United States of America Patent

PATENT NO 8432316
APP PUB NO 20110050368A1
SERIAL NO

12860140

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A high frequency device having a membrane structure with improved mechanical strength is provided. The high frequency device includes: a substrate having an aperture; a first dielectric layer that is formed from a material having etching selectivity in relation to a material of the substrate and is provided on the substrate to cover the aperture; a second dielectric layer on the first dielectric layer; and a high frequency element provided in a position opposed to the aperture on the second dielectric layer.

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Patent Owner(s)

Patent OwnerAddress
SONY SEMICONDUCTOR SOLUTIONS CORPORATION4-14-1 ASAHI-CHO ATSUGI-SHI KANAGAWA 2430014 ?2430014

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ikeda, Koichi Kanagawa, JP 62 983
Mitarai, Shun Kanagawa, JP 32 352
Tonosaki, Minehiro Kanagawa, JP 24 115

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