Photo-pumped semiconductor optical amplifier
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United States of America Patent
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Apr 30, 2013
Grant Date -
Jul 21, 2011
app pub date -
Jan 20, 2010
filing date -
Jan 20, 2010
priority date (Note) -
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Abstract
An edge photo-pumped semiconductor slab amplifier including an undoped semiconductor slab. A first gain structure is formed on an upper surface of the slab and a second gain structure is formed on a lower surface of the slab. The gain structures can be resonant periodic gain structures including a plurality of stacked quantum well layers. Confining layers are coupled to the gain structures to confine a signal beam within the semiconductor slab. Heat sinks are thermally coupled to the confining layers. Optical pump sources are provided along the side edges or coupled to the end edges of the slab so that pump light is introduced into the slab through the edges to provide gain for the quantum well layers.
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