Importance

Loading Importance Indicators...

Abstract

To provide a semiconductor memory device including an oxide semiconductor that can deal with instability of a threshold characteristic, in which writing is possible by a simple method. The semiconductor memory device functions by utilizing a characteristic that a threshold shifts when a thin film transistor including an oxide semiconductor is irradiated with ultraviolet light. Readout can be performed by setting a readout voltage between the threshold before the ultraviolet light irradiation and the threshold after irradiation. The threshold characteristic of an initial characteristic can be controlled by providing a back gate or by using two thin film transistors.

Loading the Abstract Image...

First Claim