Phase-change memory with multiple polarity bits having enhanced endurance and error tolerance
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United States of America Patent
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Apr 30, 2013
Grant Date -
Apr 12, 2012
app pub date -
Apr 13, 2011
filing date -
Apr 13, 2010
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Abstract
A Phase-Change Memory (PCM) apparatus including a data field for storing a data bits representing a data value or an inversion of the data value and a polarity field for storing a plurality of polarity bits for indicating that the data bits stored in the data field represent the data value or the inversion of the data value. In one embodiment an odd number of set polarity bits indicates that the data bits represent the inversion of the data value and an even number of set polarity bits indicates that the data bits represent the data value. The PCM apparatus has enhanced endurance and improved error tolerance.
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