Semiconductor device and method for driving the same
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United States of America Patent
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Apr 30, 2013
Grant Date -
Feb 2, 2012
app pub date -
Jul 19, 2011
filing date -
Jul 28, 2010
priority date (Note) -
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Abstract
A transistor includes first and second control gates, and a storage gate. The storage gate is made to be a conductor, supplied with a specific potential, and then made to be an insulator, thereby holding the potential. Data is written by making the storage gate a conductor, supplying a potential of data to be stored, and making the storage gate an insulator. Data is read by making the storage gate an insulator, supplying a potential to a read signal line connected to one of a source and a drain of the transistor, supplying a potential for reading data to the first control gate, and then detecting a potential of a bit line connected to the other of the source and the drain.
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