Method of screening static random access memories for unstable memory cells
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United States of America Patent
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Apr 30, 2013
Grant Date -
Jan 31, 2013
app pub date -
Jul 25, 2011
filing date -
Jul 25, 2011
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Abstract
A screening method for testing solid-state memories for the effects of long-term shift and random telegraph noise (RTN). In the context of static random access memories (SRAMs), each memory cell in the array is functionally tested with a bias voltage (e.g., the cell power supply voltage) at a severe first guardband sufficient to account for worst case long-term shift and RTN effects. Cells failing the first guardband are then repeatedly tested with the bias voltage at a second guardband, less severe than the first guardband; if the tested cells pass this second guardband, the suspect cells are considered to not be vulnerable to RTN effects. Over-screening due to an unduly severe guardband is avoided, while still screening vulnerable memories from the population.
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