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United States of America Patent
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Apr 30, 2013
Grant Date -
Nov 17, 2011
app pub date -
May 12, 2010
filing date -
May 12, 2010
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Abstract
A method of increasing a drain to source voltage measured at an access pass-gate to a SRAM circuit in a SRAM memory array, including increasing a low voltage from a low voltage source powering said SRAM circuit, and increasing a high voltage from a high voltage source powering the SRAM circuit.
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