Semiconductor light emitting device
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United States of America Patent
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Apr 30, 2013
Grant Date -
Mar 3, 2011
app pub date -
Mar 8, 2010
filing date -
Aug 31, 2009
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor light emitting device includes: a stacked body including a first and a second semiconductor layers of a first and second conductivity types respectively, and a light emitting layer provided between thereof; a first and a second electrodes in contact with the first and second semiconductor layers respectively. Light emitted is resonated between first and second end surfaces of the stacked body opposed in a first direction. The second semiconductor layer includes a ridge portion and a wide portion. A width of the ridge portion along a second direction perpendicular to the first and the stacking directions is narrower on the second electrode side than on the light emitting layer side. A width of the wide portion along the second direction is wider than the ridge portion. A width of the narrow part of the second electrode along the second direction is narrower than that on the ridge portion
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