Hermetic wafer-to-wafer bonding with electrical interconnection
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United States of America Patent
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Apr 30, 2013
Grant Date -
Nov 3, 2011
app pub date -
Apr 28, 2011
filing date -
Apr 28, 2010
priority date (Note) -
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status (Latency Note)
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Abstract
An implantable medical device (IMD) is disclosed. The IMD includes a first substrate having a front side and a backside. A first via is formed in the front side, the via extending from a bottom point in the front side to a first height located at a surface of the front side. A first conductive pad is formed in the first via, the first conductive pad having an exposed top surface lower than first height. A second substrate is coupled to the first substrate, the second substrate having a second via formed in the front side, the via extending from a bottom point in the front side to a second height located at a surface of the front side. A second conductive pad is formed in the second via, the second conductive pad having an exposed top surface lower than second height. The coupled substrates are heated until a portion of one or both conductive pads reflow, dewet, agglomerate, and merge to form an interconnect, hermetic seal, or both depending on the requirements of the device.
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