Method for incorporating pattern dependent effects in circuit simulations
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United States of America Patent
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Apr 30, 2013
Grant Date -
Jul 14, 2011
app pub date -
Mar 28, 2011
filing date -
Jan 24, 2005
priority date (Note) -
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Abstract
Methods, software, and apparatus for providing a netlist for simulation that includes one or more parameters that are determined by one or more pattern dependent effects. One particular embodiment of the present invention receives a layout of a circuit including one or more MOSFET transistors. For one or more of the MOSFET transistors, spacing between transistors is measured using the received layout and a pattern dependent parameter is determined. This parameter modifies the length of the gate that is used in simulation. In other embodiments, other pattern dependent effects can be used to determine the values of one or more parameters. These parameters may be used to modify gate length, emitter size, resistor width, or other device characteristics.
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