RF substrate bias with high power impulse magnetron sputtering (HIPIMS)
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United States of America Patent
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May 7, 2013
Grant Date -
Jun 12, 2008
app pub date -
Dec 12, 2007
filing date -
Dec 12, 2006
priority date (Note) -
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Abstract
An apparatus for generating sputtering of a target to produce a coating on a substrate with a current density on a cathode of a magnetron between 0.1 and 10 A/cm2 is provided. The apparatus comprises a power supply that is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias.
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