Method of polishing using tunable polishing formulation

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United States of America Patent

PATENT NO 8435420
APP PUB NO 20130109182A1
SERIAL NO

13283013

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Abstract

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A process for chemical mechanical polishing of a substrate having a polysilicon overburden deposited over silicon nitride is provided using multiple dilutions of a chemical mechanical polishing composition concentrate to polish the substrate, wherein a first dilution of the concentrate used to polish the substrate is tuned to exhibit a first polysilicon removal rate and a first polysilicon to silicon nitride removal rate selectivity; and wherein a second dilution of the concentrate used to polish the substrate is tuned to exhibit a second polysilicon removal rate and a second polysilicon to silicon nitride removal rate selectivity.

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Patent Owner(s)

Patent OwnerAddress
ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC451 BELLEVUE ROAD NEWARK DE 19713

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Guo, Yi Newark, US 236 1263
Reddy, Kancharla-Arun Kumar Bear, US 15 58

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