Manufacturing method of semiconductor device and manufacturing method of mask
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United States of America Patent
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May 7, 2013
Grant Date -
Apr 1, 2010
app pub date -
Sep 21, 2009
filing date -
Sep 30, 2008
priority date (Note) -
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Abstract
Provided is a technique capable of improving the dimensional accuracy of a transfer pattern in a lithography technique in which EUV light is used and the EUV light is incident obliquely on a mask and an image of the EUV light reflected from the mask is formed on a semiconductor substrate (resist film), thereby transferring the pattern formed on the mask onto the semiconductor substrate. The present invention is based on a lithography technique in which EUV light is used and an exposure optical system in which the EUV light is obliquely incident on a mask is used. In this lithography technique, an absorber and a difference in level are formed on the mask, and a projective component projected on a mask surface out of a direction cosine component of the incident light is set to be almost orthogonal to an extending direction of the difference in level.
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