Method for manufacturing evaporation donor substrate and light-emitting device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8435811
APP PUB NO 20120088324A1
SERIAL NO

13329624

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

An evaporation donor substrate which enables only a desired evaporation material to be evaporated at the time of deposition by an evaporation method, and capable of reduction in manufacturing cost by increase in use efficiency of the evaporation material and deposition with high uniformity. An evaporation donor substrate capable of controlling laser light so that a desired position of an evaporation donor substrate is irradiated with the laser light in accordance with the wavelength of the emitted laser light at the time of evaporation. Specifically, an evaporation donor substrate in which a region which reflects laser light and a region which absorbs laser light at the time of irradiation with laser light having a wavelength of greater than or equal to 400 nm and less than or equal to 600 nm at the time of evaporation are formed.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ibe, Takahiro Kanagawa, JP 39 668
Tanaka, Koichiro Kanagawa, JP 530 12050
Tsurume, Takuya Kanagawa, JP 85 2212
Yokoyama, Kohei Kanagawa, JP 88 1253

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation