Surface-emitting semiconductor laser and manufacturing method thereof
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United States of America Patent
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May 7, 2013
Grant Date -
Jul 28, 2011
app pub date -
Dec 17, 2010
filing date -
Jan 26, 2010
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A manufacturing method of a surface-emitting semiconductor laser includes the steps of: forming a stacked structure having a lower-multilayer film reflector including a lower oxidizable layer having at least one layer, an active layer having a light emitting region, an upper-multilayer film reflector including an upper oxidizable layer and an upper layer on a substrate in this order; providing a first groove in the upper layer; and providing a second groove including a portion overlapping the first groove in a planar shape and a portion not overlapping the first groove in the stacked structure.
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