Method for making light emitting diode
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 7, 2013
Grant Date -
Nov 1, 2012
app pub date -
Nov 3, 2011
filing date -
Apr 29, 2011
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of fabricating a light emitting diode includes following steps. A substrate is provided, and the substrate includes an epitaxial growth surface. A carbon nanotube layer is located on the epitaxial growth surface. A first semiconductor layer, an active layer, and a second semiconductor layer grow in that order on the substrate. An upper electrode is deposited on the second semiconductor layer. The substrate is removed. A lower electrode is deposited on the first semiconductor layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully