Method for making light emitting diode
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United States of America Patent
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May 7, 2013
Grant Date -
Nov 1, 2012
app pub date -
Nov 3, 2011
filing date -
Apr 29, 2011
priority date (Note) -
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Abstract
A method for making a light emitting diode, the method includes the following steps. First, a substrate having an epitaxial growth surface is provided. Second, a carbon nanotube layer is placed on the epitaxial growth surface. Third, a first semiconductor layer, an active layer and a second semiconductor layer are grown on the epitaxial growth surface. Fourth, a portion of the second semiconductor layer and the active layer is etched to expose a portion of the first semiconductor layer. Fifth, a first electrode is prepared on the first semiconductor layer and a second electrode is prepared on the second semiconductor layer. Sixth, the carbon nanotube layer is removed.
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