Method of manufacturing semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 7, 2013
Grant Date -
Jul 14, 2011
app pub date -
Jan 13, 2011
filing date -
Jan 13, 2010
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of manufacturing a semiconductor device includes forming a first insulating film over an underlying film by plasma polymerization of cyclic siloxane, and forming a second insulating film on the first insulating film by plasma polymerization of the cyclic siloxane continuously, after forming the first insulating film. The deposition rate of the first insulating film is slower than the deposition rate of the second insulating film.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully