Localized compressive strained semiconductor
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United States of America Patent
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May 7, 2013
Grant Date -
Nov 15, 2012
app pub date -
Jul 23, 2012
filing date -
Feb 16, 2006
priority date (Note) -
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Abstract
One aspect of the present subject matter relates to a method for forming strained semiconductor film. According to an embodiment of the method, a crystalline semiconductor bridge is formed over a substrate. The bridge has a first portion bonded to the substrate, a second portion bonded to the substrate, and a middle portion between the first and second portions separated from the substrate. The middle portion of the bridge is bonded to the substrate to provide a compressed crystalline semiconductor layer on the substrate. Other aspects are provided herein.
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