Method for manufacturing silicon carbide substrate
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 7, 2013
Grant Date -
Jan 12, 2012
app pub date -
Sep 28, 2010
filing date -
Feb 5, 2010
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully