Method and apparatus for manufacturing semiconductor device
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United States of America Patent
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May 7, 2013
Grant Date -
Jan 13, 2011
app pub date -
Jul 7, 2010
filing date -
Jul 7, 2009
priority date (Note) -
Expired
status (Latency Note)
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Abstract
According to one embodiment, in a method for manufacturing a semiconductor device, a surface region of a semiconductor substrate is modified into an amorphous layer. A microwave is irradiated to the semiconductor substrate in which the amorphous layer is formed in a dopant-containing gas atmosphere so as to form a diffusion layer in the semiconductor substrate. The dopant is diffused into the amorphous layer and is activated.
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