Unguarded Schottky barrier diodes with dielectric underetch at silicide interface
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United States of America Patent
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May 7, 2013
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N/A
app pub date -
Jun 4, 2007
filing date -
Jun 8, 2006
priority date (Note) -
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Abstract
One embodiment of the invention relates to an unguarded Schottky barrier diode. The diode includes a cathode that has a recessed region and a dielectric interface surface that laterally extends around a perimeter of the recessed region. The diode further includes an anode that conforms to the recessed region. A dielectric layer extends over the dielectric interface surface of the cathode and further extends over a portion of the anode near the perimeter. Other devices and methods are also disclosed.
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