Field effect transistor device and fabrication
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United States of America Patent
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May 7, 2013
Grant Date -
Oct 6, 2011
app pub date -
Apr 6, 2010
filing date -
Apr 6, 2010
priority date (Note) -
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Abstract
A method for forming a field effect transistor (FET) device includes forming a dielectric layer on a substrate, forming a first metal layer on the dielectric layer, removing a portion of the first metal layer to expose a portion of the dielectric layer, forming a second metal layer on the dielectric layer and the first metal layer, and removing a portion of the first metal layer and the second metal layer to define a boundary region between a first FET device and a second FET device.
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