Method for manufacturing semiconductor device and semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 7, 2013
Grant Date -
Apr 28, 2011
app pub date -
Oct 18, 2010
filing date -
Oct 26, 2009
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
In a method for manufacturing a semiconductor device, the method includes the step of growing a nitride-based III-V compound semiconductor layer, which forms a device structure, directly on a substrate without growing a buffer layer, the substrate being made of a material with a hexagonal crystal structure and having a principal surface that is oriented off at an angle of not less than −0.5° and not more than 0° from an R-plane with respect to a direction of a C-axis.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully