, methods of forming field effect transistors, and methods of forming conductive contacts
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United States of America Patent
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May 7, 2013
Grant Date -
Nov 3, 2011
app pub date -
Jul 13, 2011
filing date -
Aug 2, 2005
priority date (Note) -
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Abstract
The invention included to methods of forming CoSi2, methods of forming field effect transistors, and methods of forming conductive contacts. In one implementation, a method of forming CoSi2 includes forming a substantially amorphous layer comprising MSix over a silicon-containing substrate, where “M” comprises at least some metal other than cobalt. A layer comprising cobalt is deposited over the substantially amorphous MSix-comprising layer. The substrate is annealed effective to diffuse cobalt of the cobalt-comprising layer through the substantially amorphous MSix-comprising layer and combine with silicon of the silicon-containing substrate to form CoSi2 beneath the substantially amorphous MSix-comprising layer. Other aspects and implementations are contemplated.
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