Converting metal mask to metal-oxide etch stop layer and related semiconductor structure
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United States of America Patent
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May 7, 2013
Grant Date -
Dec 6, 2012
app pub date -
Jun 2, 2011
filing date -
Jun 2, 2011
priority date (Note) -
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Abstract
A method includes providing a semiconductor structure including a plurality of devices; depositing a nitride cap over the semiconductor structure; forming an aluminum mask over the nitride cap, the aluminum mask including a plurality of first openings; converting the aluminum mask to an aluminum oxide etch stop layer; and performing middle-of-line fabrication processing, leaving the aluminum oxide etch stop layer in place. A semiconductor structure includes a plurality of devices on a substrate; a nitride cap over the plurality of devices; an aluminum oxide etch stop layer over the nitride cap; an inter-level dielectric (ILD) over the aluminum oxide etch stop layer; and a plurality of contacts extending through the ILD, the aluminum oxide etch stop layer and the nitride cap to the plurality of devices.
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