Thin-film transistor fabrication process and display device
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United States of America Patent
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May 7, 2013
Grant Date -
Feb 25, 2010
app pub date -
Feb 18, 2008
filing date -
Feb 20, 2007
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Abstract
In a process for fabricating a thin-film transistor in which a gate electrode 4 is to be formed on a substrate 1, the process has the steps of forming the gate electrode 4 on the substrate 1, forming a metal oxide layer 7 in such a way as to cover the gate electrode 4, forming a source electrode 6 and a drain electrode 5, and carrying out annealing in an inert gas to change part of the metal oxide layer 7 into a channel region.
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