Semiconductor device using an oxide semiconductor with a plurality of metal clusters
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United States of America Patent
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May 7, 2013
Grant Date -
Aug 5, 2010
app pub date -
Jan 25, 2010
filing date -
Jan 30, 2009
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Abstract
In forming a thin film transistor, an oxide semiconductor layer is used and a cluster containing a titanium compound whose electrical conductance is higher than that of the oxide semiconductor layer is formed between the oxide semiconductor layer and a gate insulating layer.
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