SiC semiconductor device having Schottky barrier diode and method for manufacturing the same
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United States of America Patent
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May 7, 2013
Grant Date -
Aug 25, 2011
app pub date -
Feb 21, 2011
filing date -
Feb 23, 2010
priority date (Note) -
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Abstract
A SiC semiconductor device having a Schottky barrier diode includes: a substrate made of SiC and having a first conductive type, wherein the substrate includes a main surface and a rear surface; a drift layer made of SiC and having the first conductive type, wherein the drift layer is disposed on the main surface of the substrate and has an impurity concentration lower than the substrate; a Schottky electrode disposed on the drift layer and has a Schottky contact with a surface of the drift layer; and an ohmic electrode disposed on the rear surface of the substrate. The Schottky electrode directly contacts the drift layer in such a manner that a lattice of the Schottky electrode is matched with a lattice of the drift layer.
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