Semiconductor light emitting device and method for manufacturing same

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United States of America Patent

PATENT NO 8436378
SERIAL NO

12817592

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Abstract

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According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating film, a first interconnection, a second interconnection, a first metal pillar, a second metal pillar, a resin, and a fluorescent layer. The semiconductor layer has a first major surface, a second major surface formed on an opposite side to the first major surface, and a light emitting layer. The first electrode and the second electrode are provided on the second major surface of the semiconductor layer. The fluorescent layer faces to the first major surface of the semiconductor layer and includes a plurality of kinds of fluorescent materials having different peak wavelengths of emission light.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ishikawa, Masayuki Kanagawa-ken, JP 236 4772
Kojima, Akihiro Kanagawa-ken, JP 168 2578
Komatsu, Tetsuro Fukuoka-ken, JP 38 1105
Shibata, Hideki Kanagawa-ken, JP 90 1823
Sugizaki, Yoshiaki Kanagawa-ken, JP 270 3165
Tamura, Hideo Kanagawa-ken, JP 80 1232

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