Semiconductor light emitting device and method for manufacturing the same
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United States of America Patent
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May 7, 2013
Grant Date -
Feb 10, 2011
app pub date -
Jul 27, 2010
filing date -
Aug 10, 2009
priority date (Note) -
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Abstract
A semiconductor light emitting device includes a light emitting portion, and an electrode formed on the light emitting portion. The electrode includes: a light reflecting layer configured to reflect light emitted from the light emitting portion and including a first metal; a first seed layer formed directly on the light reflecting layer and including a second metal; a second seed layer coating at least side surfaces of the light reflecting layer and the first seed layer, the second seed layer including a third metal; and a plating layer coating at least top and side surfaces of the second seed layer, the plating layer including a fourth metal.
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