Exposure mask used for manufacturing a semiconductor device having impurity layer and a semiconductor device
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United States of America Patent
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May 7, 2013
Grant Date -
Sep 29, 2011
app pub date -
Mar 16, 2011
filing date -
Mar 23, 2010
priority date (Note) -
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Abstract
An exposure mask according to an embodiment of the invention includes a first transmission region where a plurality of dots through which light is shielded or transmitted are arrayed into a matrix form having rows and columns and a second transmission region where a plurality of dots through which the light is shielded or transmitted are arrayed into a matrix form having rows and columns and is disposed adjacent to the first transmission region.
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