Semiconductor device
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United States of America Patent
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May 7, 2013
Grant Date -
Mar 1, 2012
app pub date -
Aug 31, 2011
filing date -
Aug 31, 2010
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a semiconductor device of the invention, a semiconductor pillar configuring a vertical MOS transistor has an upper pillar having a first width and a lower pillar having a second width. A side surface of the upper pillar is covered with a second insulation film and a third insulation film and the lower pillar is covered with a first insulation film, which is a gate insulation film, from a side surface thereof to the second insulation film. A gate electrode is insulated from an upper conductive layer by the second and third insulation films.
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