Nonvolatile semiconductor memory device and method for manufacturing same
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United States of America Patent
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May 7, 2013
Grant Date -
May 19, 2011
app pub date -
Jul 20, 2010
filing date -
Nov 19, 2009
priority date (Note) -
Expired
status (Latency Note)
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Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes a substrate, a stacked body, a plurality of semiconductor pillars and a charge storage film. The stacked body is provided on the substrate, with a plurality of insulating films alternately stacked with a plurality of electrode films, and includes a hydrophobic layer provided between one of the insulating films and one of the electrode films. The hydrophobic layer has higher hydrophobicity than the electrode films. The plurality of semiconductor pillars extend in a stacking direction of the stacked body and pierce the stacked body, and the charge storage film is provided between the electrode films and one of the semiconductor pillars.
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