Backside depletion for backside illuminated image sensors
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United States of America Patent
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May 7, 2013
Grant Date -
Sep 18, 2008
app pub date -
Apr 22, 2008
filing date -
Sep 29, 2006
priority date (Note) -
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Abstract
A backside illuminated image sensor is provided which includes a substrate having a front side and a backside, a sensor formed in the substrate at the front side, the sensor including at least a photodiode, and a depletion region formed in the substrate at the backside, a depth of the depletion region is less than 20% of a thickness of the substrate.
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