Method, structure, and design structure for a through-silicon-via Wilkinson power divider

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United States of America Patent

PATENT NO 8436446
APP PUB NO 20120212303A1
SERIAL NO

13455725

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Abstract

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A method, structure, and design structure for a through-silicon-via Wilkinson power divider. A method includes: forming an input on a first side of a substrate; forming a first leg comprising a first through-silicon-via formed in the substrate, wherein the first leg electrically connects the input and a first output; forming a second leg comprising a second through-silicon-via formed in the substrate, wherein the second leg electrically connects the input and a second output, and forming a resistor electrically connected between the first output and the second output.

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Patent Owner(s)

Patent OwnerAddress
GLOBALFOUNDRIES U S INC400 STONEBREAK ROAD EXTENSION MALTA NY 12020

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ding, Hanyi Essex Junction, US 117 1118
Joseph, Alvin J Williston, US 131 1275
Woods,, Jr Wayne H Burlington, US 60 329

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